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LED1200-35M32
Stem type LED with high output power
LED1200-35M32 is an InGaAsP LED mounted on a TO-18 stem with a spherical glass lens being designed for high output power uses. On forward bias, it emits a spectral band of radiation, which peaks at 1200nm.
Outer dimension [Unit:mm] Features 1) High radiated intensity 2) High Reliability Specifications 1) Product Name 2) Type No. 3) Chip Spec. (1) Material (2) Peak Wavelength 4) Package (1) Type (2) Lens (3) Cap
NIR LED Lamp LED1200-35M32 InGaAs/InP 1200 nm TO-18 stem Spherical glass lens Gold plated
Absolute Maximum Ratings Item Symbol Maximum Rated Value Unit Ambient Temperature Power Dissipation PD 120 mW Ta = 25 C Forward Current IF 100 mA Ta = 25 C Pulse Forward Current IFP 1000 mA Ta = 25 C Reverse Voltage VR 3 V Ta = 25 C Operating Temperature TOPR -20 ~ +90 C Storage Temperature -30 ~ +100 C TSTG Soldering Temperature TSOL 260 C Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 s. Soldering condition : Soldering condition must be completed within 3 seconds at 260C Electro-Optical Characteristics Item Symbol Condition Minimum Typical Maximum Forward Voltage VF IF = 20 mA 0.8 1.3 Reverse Current IR VR = 3 V 10 Total Radiated Power PO IF = 20 mA 0.8 1.8 1150 1200 1250 Peak Wavelength IF = 20 mA P 100 Half Width IF = 20 mA Viewing Half Angle IF = 20 mA 15 1/2 Rise Time tr IF = 20 mA 10 Fall Time tf IF = 20 mA 10 Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742
Unit V uA mW nm nm deg. ns ns
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